Improved Operation Characteristics for Charge-Trapping Flash Memory Devices with SiGe Buried Channel and Stacked Charge-Trapping Layers

摘要：

Two approaches are proposed in this work to improve the operation characteristics of charge-trapping (CT) flash devices, namely, SiGe buried channel and stacked charge-trapping layer. SiGe buried channel with different Ge contents and various thicknesses of Si-cap layer on operation characteristics of CT flash devices were studied. The programming and erasing speeds of CT flash devices are significantly improved by employing SiGe buried channel. The retention properties of CT flash devices are satisfactory with suitable Ge content in SiGe buried channel and proper thickness of Si-cap layer. Moreover, the programming and erasing speeds of CT flash devices are significantly improved by applying Si3N4/HfxAl1-xO charge trapping layers due to the enhanced carrier capture efficiency with extra interface (Si3N4/HfxAl1-xO). The retention property is clearly improved as well.

作者: Kuei-Shu Chang-Liao Li-Jung Liu Zong-Hao Ye Wen-Chun Keng Tien-Ko Wang Pei-Yi Gu Ming-Jinn Tsai

作者单位: Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hs

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1061-1064

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）