Cu-based and WOx-based Resistive Switching Memories (ReRAMs) for Embedded and Stand-alone Applications

摘要：

Two types of ReRAM are investigated. The first is a CB-ReRAM (conducting bridge ReRAM) that uses metallic ions to form the bridge. This type of device is known to be unstable because the conducting bridge tends to self-destruct. By adding a buffer layer between the electrode and the electrolyte, the retention of the Cu-based CB-ReRAM is greatly improved while the superior electrical performance is preserved. The second is a TMO (transition metal oxide) type ReRAM. The WOx-based TMO ReRAM is very simple and easily integrated, and shows excellent electrical properties for NVM applications. The mechanism of switching and conducting are also investigated in detail.

作者: Yi-Chou Chen Wei-Chih Chien Yu-Yu Lin Feng-Ming Lee Kuang-Yeu Hsieh Chih-Yuan Lu

作者单位: Emerging Central Lab. Macronix International Co., Ltd., 16 Li-Hsin Rd. Hsinchu Science Park, Hsinchu, Taiwan, R.O.C

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1065-1068

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）