The Static and Dynamic Behaviors of Resistive Random Access Memory and Its Potential Applications As a Memristor

摘要：

In this paper, the static and dynamic switching characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) have been examined. Based on the experimental results, several pertinent device characteristics can be developed, which include a tunneling barrier width model to explain the RRAM switching behaviors, and the ac transient switching characteristics for circuit model development. We also investigated the potential applications of RRAM as a memristor for both digital and analog circuit design, and discuss the feasibilities and problems to be solved.

作者: Steve S. Chung Y. -H. Tseng

作者单位: Department of Electronics Engineering, National Chiao Tung University, Taiwan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1069-1072

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）