Peripheral domain switching and fatigue-resistive readout of ferroelectric random access memories

摘要：

For the integration of high-density ferroelectric random access memories, each memory cell can be formed at the cross point of a plate line and a common node electrode, where the ferroelectric film is continuous between them. However, the peripheral region beyond the cross point of each cell without electrode coverage could also switch under the writing/reading pulse. To avoid this crosstalk problem between adjacent memory cells, the safest distance between the cells is estimated to be 0.270.34 μm for Pb(Zr,Ti)O3 thin-film capacitors from short pulse measurements. With the shortening of the repetitive reading/wiring pulse width down to domain switching time, the capacitor with Pt electrodes is rather fatigue resistive.

作者: An-Quan Jiang Ting-Ao Tang

作者单位: State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 200433, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1077-1079

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）