Thermal physical model for Ge2Sb2Te5 phase change memory in electrical memory device

摘要：

In order to calculate the temperature of the phase change memory (PCM) cell, a thermal physical model of the PCM device having Ge2Sb2Te5 (GST) layer has been proposed and demonstrated. By calculating and comparing with the Joule heating of the PCM cell at different programming state between based on the voltage - current curves and based on the formula to calculate temperature, it is found that the Joule heating increases with the amorphous fraction increasing.

作者: Daolin Cai Zhitang Song Houpeng Chen

作者单位: State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Peoples Republic of China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1103-1105

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）