Characteristics of a New Trench-Oxide Thin-Film Transistor and its 1T-DRAM Applications
In this paper, we propose a simple trench-oxide thinfilm transistor (TO TFT) process for IT-DRAM applications. Our proposed TO TFT structure has several novel features as follows: 1. The buried oxide and the isolation oxide are carried out simultaneously in order to achieve a goal of simple process. 2. The trench design is used to improve both the sensing current windows (-84％) and the retention time (- 57％). 3. The thermal stability is drastically improved by its naturally formed source/drain tie. The above mentioned features help our proposed device structure to demonstrate the desired characteristics that are better than that of a conventional TFT. Additionally, the thermal instability is drastically improved which is good for long-term device operation.
Hsien-Nan Chiu Jyi-Tsong Lin Yi-Chuen Eng Tzu-Feng Chang Chih-Hung Sun Po-Hiesh Lin Chih-Hao Kuo Hsuan-Hsu Chen Cheng-Hsin Chen
Dept. of Electrical Engineering, National Sun Yat-Sen University, 70 Lien-Hai Rd, Kaohsiung 80424, Taiwan R.O.C
国际会议
上海
英文
1106-1108
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）