Remarkable Improvement in Switching Ratio of ReRAM Using In/Poly-Fe2O3/Nb-SrTiO3 Devices

摘要：

Typical bipolar resistive switching behavior are observed in the In/poly-Fe2O3/Nb-SrTiO3 (Nb-STO) devices. Rectifying l-V characteristics along with switching ratio significantly related to the polarity of read voltage have been found. A negative read voltage remarkable enhances the switching ratio to 107 comparing with 102 for the positive polarity, which demonstrates an efficient way to improve ReRAMs switching characteristic. Furthermore, the cycle-to-cycle uniformity, set&reset current, resistance distribution and retention time have been measured that exhibits good device performance for promising applications.

作者: Yuan-Sha Chen Bin Chen Bin Gao Gui-Jun Lian Li-Feng Liu Xiao-Yan Liu Jin-Feng Kang

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, China School of Physics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1109-1111

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）