Multilevel Storage Characteristics in ZrO2-ReRAM Brought about by Ideal Current Limiter

摘要：

1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistors gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state.

关键词： Resistive switching Compliance current Parasitic capacitance Multilevel

作者: Wen-Tai Lian Ming Liu Shi-Bing Long Hang-Bing Lv Qi Liu Ying-Tao Li Yan Wang Sen Zhang Yue-Hua Dai Jun-ning Chen

作者单位: Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronic Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronic College of Electronics and Technology, Anhui University, Hefei, 230039, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1112-1114

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）