Nanoscale Flash and Resistive Switching Memories Using IrOx Metal Nanocrystals

摘要：

The nanoscale (EOT<6 run) flash and resistive switching memories using IrOx nanocrystals have been investigated. The IrOx nanocrystals embedded in highK Al2O3 film are observed by both high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The average size and density of IrOx nanocrystals are found to be～3 run and～7×1012/cm2, respectively. The flash memory devices with excellent endurance of 104 cycles and moderate retention of 10 hours are obtained. A bipolar resistive switching memory with a resistance ratio of～1.4×102 is observed after 1 hour of retention time.

作者: W. Banerjee S. Maikap

作者单位: Nano Laboratory, Department of Electronic Engineering, Chang Gung University, Tao-Ynan 333, Taiwan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1115-1117

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）