Bistable Resistance Switching of Cu/Cu:HfO2/Pt for Nonvolatile Memory Application

摘要：

The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching based on the temperature test.

关键词： Cu doping nonvolatile memory (NVM) resistive random access memory (ReRAM) resistive switching hafnium oxide

作者: Yan Wang Ming Liu Shi-Bing Long Hang-Bing Lv Qi Liu Qin Wang Ying-Tao Li Sen Zhang Wen-Tai Lian Jian-Hong Yang

作者单位: Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronic @Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectroni Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronic Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzho

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1118-1120

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）