Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 Conductive-Bridging-RAMs and HfO2 Oxide-RAMs

摘要：

We compare the switching behavior of two classes of resistive RAMs (RRAMs), namely Cu-SiO2 based conductive-bridging-RAMS (CBRAMs) and HfO2 based Oxide-RRAMs (OxRRAMs). In both devices the ON/OFF ratios are high, the set voltage is reproducible from cycle to cycle, and the reset voltage displays large dispersion. No forming stage is required in the investigated OxRRAMs. CBRAMs offer much lower programming voltage and current. The switching kinetics is limited by oxygen vacancy diffusion in OxRRAMs and by copper nucleation in CBRAMs.

作者: Patrice Gonon Christophe Vallee Vincent Jousseaume Yoann Bernard Cedric Mannequin Mathieu Mougenot Helen Grampeix

作者单位: LTM-UJF-CNRS, 17 rue des martyrs, 38054 Grenoble cedex 9 LETI-CEA-Minatec, 17 rue des martyrs, 38054 Grenoble cedex 9 LTM-UJF-CNRS, 17 rue des martyrs, 38054 Grenoble cedex 9 LETI-CEA-Minatec, 17 rue des martyrs, 38054

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1124-1126

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）