A Design of Access-Diode-Array in Phase Change Random Access Memory

摘要：

In this paper, a preparation process of PCRAM accessdiode-array with proprietary intellectual property rights (PIPR) is shown simply. Then, Relationship between device parameters and diode performance, including drive-current, breakdown, especially disturb-current, which influences the data-veracity and reliability of PCRAM, is analyzed from the views of carriers distribution and parasitic PNP-BJT. At the end, a simple and effective method, which can reduce disturb-current radio from 15％ to 0.25％, is shown according to the technology process. TCAD simulation obeyed the SMIC 0.13μm CMOS process.

关键词： Access diode breakdown voltage disturb-current drive-current phase change Random Access memory (PCRAM) TCAD

作者: Yi-Jin Li Zhi-Tang Song Yun Ling Chao Zhang Yue-Feng Gon Sheng-Qin Luo Xiao-Ling Jia

作者单位: State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai School of Electronics and Information, Tongji University, Shanghai 201804, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1127-1129

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）