Simple and low cost fabrication process of high density vertical Phase-Change Random Access Memory integrated with Electroless Deposition method

摘要：

Electroless Deposition (ELD) method was developed to fabricate metal nanoplug heater for vertical PhaseChange Random Access Memory (PCRAM) application. We demonstrated a functional vertical PCRAM device with heater diameter size around 9 urn by ELD method without Chemical Mechanical Planarization (CMP) process. It was also demonstrated that even 50 nm and 90 nm metal nanoplug can be easily fabricated by ELD process. Therefore ELD process for metal plug fabrication has great potential for low cost and high density vertical PCRAM application. 1. Introduction Phase-Change Random Access Memory (PCRAM) based on chalcogenide materials was proposed by Ovshinsky in the 1968s because of the large resistance difference between the amorphous state and crystalline state of the chalcogenide materials 1. PCRAM has recently been regarded as one of the most promising nonvolatile memory technologies for the next generation because of the advantages of high endurance, high scalability, low power, high speed and good compatibility with CMOS technologies 2. How to reduce the RESET current is the most important problem for vertical PCRAM. Many methods have been proposed for this purpose which can be roughly categorized as optimization of phase change material 3 and modification of cell structure to increase the effective thermal energy 4 to promote amorphous formation of the phase change material. However, for all these approaches mentioned above, there is a common feature that is Chemical Mechanical Planarization (CMP) process must be used to fabricate exposed metal nanoplug as heater. This is after Chemical Vapor Deposition (CVD) metal deposition into the via. CMP equipment is generally exorbitant that not every laboratory can afford it. In this paper, Electroless deposition (ELD) method is used to fabricate metal nanoplug heater for vertical PCRAM application.

作者: Kaifang cheng Xiaofeng Wang Xiaodong Wang Jiayong Zhang Huili Ma An Ji Fuhua Yang

作者单位: Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Ch Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Ch

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1130-1132

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）