A New TFT with Trenched Body and Airgap-Insulated Structure for 3D Capacitorless IT-DRAM Application

摘要：

We propose a new TFT with trenched body and airgapinsulated structure (AITFT) for one-transistor dynamic random access memory (IT-DRAM) application. According to the TCAD numerical simulations, AITFT can obtain excess 212％ sensing current window and less 42％ retention time compared with the conventional TFT.

作者: Jyi-Tsong Lin Tzu-Feng Chang Yi-Chuen Eng Chih-Hung Sun Hsien-Nan Chiu Chun-Yu Chen Chih-Hao Kuo Hsuan-Hsu Chen Po-Hsieh Lin

作者单位: Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan ROC

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1133-1135

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）