40nm10T SRAM Cell with Independent SNM WM and Suppress Active and Leakage Power

摘要：

As the MOSFETs channel length is scaling down, SRAM stability becomes the major concern for future technology. The cell becomes more susceptible to both process induced variation in device geometry and threshold voltage variability due to doping fluctuation in the channel region. In this paper, a novel highly stable 10T SRAM cell is proposed which eliminates read SNM during read and write operation The cell suppresses active power owing to avoid the half select cell bit line fighting power. It also can work at ultra-low-voltage sub-threshold operation due to transistor stacking in the Read path to reduce leakage.

关键词： 10T SRAM Leakage Low Power Static Noise Margin Write Margin Active power

作者: Ma Ya-qi Zheng Jian-bin Zhang Zhao-yong Yao Qi-shuang Wang Yong Zhang Yi-ping

作者单位: Aicestar Technology Corp., Suzhou 21502 1, China Aicestar Technology Corp.,Suzhou 21502 1, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1136-1138

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）