A Compact Model for Phase Change Memory Based on Carrier Transport Mechanism
In this paper, a compact model for phase change memory (PCM) based on carrier transport mechanism is presented. In this model, the set and reset resistances of the cell are calculated through the traditional transport theory and the hopping transport theory respectively, coupling with the temperature and the phase-change kinetics calculation. With the temperature-sensing and storage module embeded, this model is effective in partial crystallization condition. The I-V performance and the R-I status are calibrated by experimental data and numerical simulation. This model is implemented in Verilog-A, making it easily applied to many circuit level simulation tools and useful to PCM design.
Laidong Wang Yiqun Wei Wei Wang Ling Wang Xinnan Lin Jin He
The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Hi-Tech Industrial Park South, Shenzhen 518057, P.R. China
国际会议
上海
英文
1139-1141
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）