Pulse Voltage Dependent Resistive Switching Behaviors of HfO2-Based RRAM

摘要：

Voltage pulse dependent resistive switching behavior during SET process in HfO2-based RRAM device is investigated. When a resistor is connected in series to RRAM during the SET process, the resistance uniformity can be improved. Voltage pulse controlled resistance states were observed. This behavior may provide the new application with the new function circuits.

作者: Bin Gao Bing Chen Yuansha Chen Lifeng Liu Xiaoyan Liu Ruqi Han Jinfeng Kang

作者单位: Institute of Microelectronics, Peking University & Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1145-1147

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）