A Low-cost Memristor Based on Titanium Oxide
Memristor has been extensively investigated as the fourth fundamental circuit element. A common material in fabricating memristors is titanium oxide. The growth of titanium oxide has so far been focused on atomic layer deposition or sputtering, which is expensive. In this paper, a low-cost memristor device is demonstrated based on titanium oxide, grown by the thermal oxidation of deposited Ti film with a lowtemperature process. Both the high and low resistance states of the device can be continually modulated by the successive voltage sweeps. Moreover, multilevel storage can be achieved in the device by using various maximum voltages during the set process.
Memristor Titanium oxide Thermal oxidation Multilevel.
Ying-Tao Li Ming Liu Shi-Bing Long Hang-Bing Lv Qi Liu Qin Wang Yan Wang Sen Zhang Wen-Tai Lian Su Liu
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronic Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronic Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzho
国际会议
上海
英文
1148-1150
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）