On the Bipolar and Unipolar Resistive Switching Characteristics in Ag/SiO2/Pt Memory Cells

摘要：

Resistive switching characteristics of Ag/SiO2/Pt memory cells with different set current compliance are studied. Ag/SiO2/Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage(<0.5V), low operation current(~1μA), high resistance ratio (104) and good retention characteristic. Coexistence of bipolar and unipolar resistance switching is observed in Ag/SiO2/Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO2/Pt cells are discussed.

作者: Lifeng Liu Bin Gao Brag Chen Yuansha Chen Yi Wang Jinfeng Kang Ruqi Han

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1157-1159

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）