Resistive Switching Mechanism of Cu Doped ZrO2-Based RRAM
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching characteristics according to a series of convincing evidences. Temperature-dependent resistive switching behaviors show that a metallic conductive channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic channel is the nanoscale Cu conductive filament. The metal filaments are observed by TEM and the component is also confirmed. We propose that the set and reset process stem from the thermal effect assisted electrochemical reactions.
RRAM Resistive switching Zirconium oxide Metal filament
Shi-Bing Long Qi Liu Hang-Bing Lv Ying-Tao Li Yan Wang Sen Zhang Wen-Tai Lian Ming Liu
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
国际会议
上海
英文
1163-1165
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）