New Functional Devices Fabricated by Bio Nano Process
The memory effect in floating nanodot gate field effect transistor (FET) was investigated by fabricating biomineralized inorganic nanodot embedded metal-oxide-semiconductor (MOS) devices. Artificially biomineralized Co oxide cores accommodated in ferritins were utilized as a charge storage node of floating gate memory. Two dimensional array of Co oxide core accommodated ferritin were, after selective protein elimination, buried into the stacked dielectric layers of MOS capacitors and MOSFETs. Fabricated MOS capacitors and MOSFETs presented a clear hysteresis in capacitance-voltage (C-V) characteristics and drain current-gate voltage (Id-Vg) characteristics, respectively. The observed hysteresis in C-V and Id-Vg are attributed to the electron and hole confinement within the embedded ferritin cores. These results clearly support the biologically synthesized cores work as charge storage nodes. This work proved the feasibility of the biological path for fabrication of electronic device components.
Yukiharu Uraoka Ichiro Yamashita
Nara Institute of Science and Technology 8916-5, Takayama, Ikoma, Nara 630-0192, Japan CREST, Japan Nara Institute of Science and Technology 8916-5, Takayama, Ikoma, Nara 630-0192, Japan Panasonic Ele
国际会议
上海
英文
1172-1175
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）