Graphene-Dielectric Integration for High Speed Graphene Transistors

摘要：

Graphene is emerging as an interesting electronic material for future electronics due to its exceptionally high carrier mobility and single-atomic thickness. Graphene-dielectric integration is of critical importance for the development of graphene transistors and a new generation of graphene based electronics. Deposition of dielectric materials onto graphene is of significant challenge due to the intrinsic material incompatibility between pristine graphene and dielectric oxide materials. In our work, a physical assembly approach has recently been explored to integrate dielectric nanostructures with graphene without introducing any appreciable defects in graphene lattice, and enabled top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm2/Vs) reported to date. This study represents an important step towards high performance graphene electronics, and can open exciting opportunities in high speed high frequency applications.

作者: Xiangfeng Duan

作者单位: Department of Chemistry and Biochemistry, Los Angeles, California 90095, USA California Nanosystems Institute, University of California, Los Angeles, California 90095, USA

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1184-1187

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）