Carbon Based Graphene Nanoelectronics Technologies

摘要：

Graphene, a two-dimensional carbon form with the highest intrinsic carrier mobility and many desirable physical properties at room temperature, is considered a promising material for ultrahigh speed and low power devices with the possibility of strong scaling potential due to the ultra-thin body. (Fig. 1) 1-3 Here IBM reports progress in graphene nanoelectronics, synthesizing wafer-scale monolayer-controlled graphene and fabricating high-speed single atomic layer graphene FETs (GFET) with the highest value reported cut-off frequency (fT) approaching 100 GHz, exceeding that of the same gate length Si FETs. It is achieved by improving gate oxide deposition and reducing series resistance. Systematic characterization and small-signal models enable further engineering and optimization for even higher performance. The high Ion/loff ratios from bi-layer graphene suggest potential not only for analog but also for logic applications.

作者: Chun-Yung Sung

作者单位: IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1192-1193

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）