Single-Electron Transistors fabricated by Electroless Plated Nanogap Electrodes and Chemisorbed Au Nanoparticles

摘要：

Coulomb diamonds were clearly observed on singleelectron transistors (SETs) fabricated by bottom-up processes of electroless plating of Au nanogap electrodes and chemisorption of a Au nanoparticle at 80 K. In the drain current-drain voltage characteristics, Coulomb staircases were modulated by the side gate voltage. Tunneling resistances and source/drain/gate capacitances of the SET were evaluated by fitting the theoretical Coulomb staircase based on the full orthodox theory in a double-barrier tunneling junction to the experimental results of Coulomb blockade under the application of side gate voltages.

作者: Yutaka Majima

作者单位: Materials and Structures Laboratory,Tokyo Institute of Technology, Yokohama 226-8503, Japan CREST-JST, Yokohama 226-8503, Japan WCU program, Sunchon National University, Jeonnam 540-742, Korea

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1194-1197

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）