Characteristics and modeling of Si-nanowire FETs

摘要：

In this paper, the C-V and I-V characteristics of Sinanowire FET are presented. From the C-V data, the effects of undoped floating channel on the Sinanowire FET are analyzed. Also, the intrinsic channel capacitance and mobility therein are extracted accurately by eliminating the effect of parasitic capacitances. Moreover, the I-V data free from the effect of the series resistance are obtained and fitted with compact model. Finally, the volume trap density Nt is characterized and discussed in correlation with differing oxide processes and the 1/f noise as the critical reliability issue in SiNWFET.

作者: Yoon-Ha Jeong Rock-Hyun Baek Sang-Hyun Lee Chang-Ki Baek Dae M. Kim

作者单位: Department of Electronic and Electrical Engineering, Pohang University of Science and Technology (PO Department of Electronic and Electrical Engineering, Pohang University of Science and Technology (PO School of Computational Sciences, Korea Institute for Advanced Study (KIAS), Seoul 130-722, Korea

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1206-1209

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）