Mechanisms of nanochannel formation processes: thermal oxidation of Si nanostructures and graphene formation on SiC

摘要：

Two topics are introduced from our studies on the formation mechanisms of nanochannels: thermal silicon oxidation to form silicon wire channels, and siliconcarbide thermal decomposition to form atomically thin graphene channels. Silicon emission and oxide viscous flow processes are necessary to explain thermal oxidation to form silicon nanochannels. Interfacial growth should be considered for the epitaxial graphene formation on silicon-carbide substrate.

作者: Hiroyuki Kageshima

作者单位: NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi 243-0198, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1218-1221

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）