Applications of Tunneling FET in Memory Devices

摘要：

Because of the special p-i-n structure of the tunneling FET (TFET), many different composite transistors can be formed with careful device design by combining TFET with MOSFET. In this paper, we propose the special applications of TFET as memory devices. A novel capacitor-less DRAM cell based on floating junction gate (FJG) concept can be configured with TFET. In addition, several different memory cells containing TFET will be discussed.

作者: Song-Gan Zang Xin-Yan Liu Xi Lin Lei Liu Wei Liu David Wei Zhang Peng-Fei Wang Walter Hansch

作者单位: State Key Laboratory of ASIC and System, Dept. of Microelectronics, Fudan University,Shanghai, China State Key Laboratory of ASIC and System, Dept. of Microelectronics, Fudan University, Shanghai, Chin Oriental Semiconductor Co., Ltd, Suzhou, China Institute for Physics, Universitaet der Bundeswehr Munich, 85577 Neubiberg, Germany

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1238-1240

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）