Impacts of Diameter-Dependent Annealing on S/D Extension Random Dopant Fluctuations in Silicon Nanowire MOSFETs
In this paper, the impacts of diameter-dependent annealing (DDA) effect on nanowire S/D extension random dopant fluctuations (SDE-RDF) in silicon nanowire MOSFETs (SNWTs) are investigated, in terms of electrostatic properties, source/drain series resistance (RSD), and driving current. The SDE-RDF induced variations of threshold voltage (Vth) and DIBL in SNWTs with different diameters are found to be modest and decrease as the diameters down-scale. However, SDE-RDF induced RSd variation in SNWTs is enhanced by abnormal DDA effects, which aggravates the drive current variations with the downscaling of SNWT diameter. The results also show that Vth is the dominant factor in ON/OFF current ratio variation while RSd dominates that of ON current. The tradeoff between RSd and Vth dominant current variations is discussed to give some guidelines for SDE-RDF-aware design in SNWTs.
Tao Yu Runsheng Wang Wei Ding Ru Huang
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics Peking University, Beijing 100871, China
国际会议
上海
英文
1241-1243
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）