The EL properties of well-aligned n-ZnO nanorods/p-GaN structure

摘要：

Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I-V characteristic results show that the nanosized junction can increase the carrier injection efficiency of the n-ZnO nanorods/p-GaN LED device.

作者: Shu-Yi Liu Jia-Hong Wu Shu-Ti Li Tao Chen Shao-Ren Deng Yu-Long Jiang Guo-Ping Ru Xin-Ping Qu

作者单位: State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou S106 State Key Laboratory of ASIC and Systems, Department of Microelectronics, Fudan University, Shanghai

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1244-1246

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）