The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode

摘要：

The effect of isotropic and anisotropic scattering within the drain region of diode with ballistic channel is investigated using the semiclassical Monte Carlo simulation, and the results are discussed. The results show that the isotropic scattering can severely degrade the steady-state current, the electrons mean velocity, and increase the electrons concentration in channel because some hot electrons can back into the channel from drain, and even return to the source. On the contrary, anisotropic scattering can suppresses the backward flow of hot electrons. We conclude that the isotropic scattering in the drain region seriously influences the carrier transport relative to anisotropic scattering.

作者: A. Abudukelimu H. Iwai K. Kakushima P. Ahmet M. Geni K. Tsutsui A. Nishiyama N. Sugii K. Natori T. Hattori

作者单位: School of Mechanical Engineering, Xinjiang University, 21 Youhaobeilu, Urumqi, China Frontier Research Center, Tokyo Institute of Technology Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 4259 S2-

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1247-1249

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）