GaN Smart Discrete Power Devices
GaN Smart Discrete power devices were realized using the AlGaN/GaN-on-Si platform, where two builtin intelligent self-protection functions were demonstrated. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the new design exhibits only a 0.55 V onset voltage in the forward biased ON state, while effectively blocks the reverse current conduction. The device fabrication is also free of extra photomask and process steps. Second, an AlGaN/GaN lateral field-effect rectifier (L-FER) with intrinsic ON state current limiting capability was fabricated, featuring a Schottky controlled depletion- mode (D-mode) channel extension (length of LD) beyond the ohmic contact at the cathode electrode, where the on-state current of the new rectifiers are self-limited at 4.59 kA/cm2 (Z,D=1.3 um) and 3.56 kA/cm (Lq=1.9 um) at room temperature. The current limiting level shows a negative temperature coefficient (TC) that is desirable for thermal stability.
Kevin J. Chen Chunhua Zhou
Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
国际会议
上海
英文
1303-1306
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）