Submicron-channel InGaAs MISFET with epitaxially grown source

摘要：

We would like to report our approaches to realize epitaxially grown source toward high drain current in III-V MISFET. One approach is an InP/InGaAs composite channel MISFET with regrown InGaAs source/drain. When gate length of 150 nm was fabricated, Id at Vd=0.8 V was 0.8 A/mm and maximum gm was 0.38 S/mm at Vd=0.5 V. The other approach is vertical FET. In case of vertical FET with dual gate, shrinking the mesa width of channel region is important for high speed operation. Thus we introduced undercut etching after fabrication of the mesa. In fabricated device, the width of channel mesa was 15 nm. Channel length was 60 nm. Observed drain current density at Vd=0.75 V was 1.1 A/mm. Maximum gm was 0.53 S/mm.

作者: Yasuyuki Miyamoto Hisahi Saito Torn Kanazawa

作者单位: Department of Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2,O-okayama, Meguro, Tokyo 152-8552, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1307-1310

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）