Highly Efficient GaN Power Transistors and Integrated Circuits with High Breakdown Voltages

摘要：

GaN is very promising for power switching transistors taking advantages of the high breakdown strength with high saturation electron velocity. The lateral and compact device configuration enables high speed switching with reduced on-state resistance and parasitic capacitance. In this paper, state-of-theart device technologies of GaN transistor and its monolithic integration for switching applications are reviewed. The topics include a novel normally-off transistor called Gate Injection Transistor (GIT) fabricated on a cost-effective Si substrate, and thermally stable isolation by Fe ion implantation. These are applied for the world first monolithic GaN inverter IC for motor drive with high efficiency. The presented technologies are indispensable for widespread use of GaN power switching transistors in the future.

作者: Tsuyoshi Tanaka Tetsuzo Ueda Daisuke Ueda

作者单位: Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, 1 Kotari-yakemac Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai Seika-cho Souraku-gu

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1315-1318

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）