THz Oscillators Using Resonant Tunneling Diodes
We report on our recent results of terahertz oscillators with resonant tunneling diodes (RTDs) at room temperature. By a structure with high current density and small capacitance, a fundamental oscillation at 831 GHz was obtained in GalnAs/AlAs double-barrier RTDs integrated with slot antennas. A comparison with theoretical analysis shows a possibility of electron transition from the F to L bands in the collector transit region which brings about a long transit time. By suppressing this transition with a graded emitter structure, a fundamental oscillation up to 1.04 THz was obtained at room temperature. This is the first oscillation over ITHz of a room-temperature electronic single oscillator. For high output power, an offset-fed slot antenna and high current density was used, and 150 (i V at 270GHz with the DC-to-RF conversion of 1.9％ was obtained. Power combining in array configuration, frequency change with bias current, and direct frequency modulation were also shown.
M. Asada S. Suzuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 2-12-1-S9-3 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
国际会议
上海
英文
1331-1334
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）