High-Breakdown Voltage Field-Plated Normally-OFF AlGaN/GaN HEMTs for Power Management
The high breakdown voltage AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated for high frequency and high power application, employing by CF4 plasma treatment for enhancementmode (E-mode). The results showed that by adding the distance of gate to drain, ZGd from 5 urn to 15um, the breakdown voltage of the device was rapidly increased 350V, whose value is from 50V to 400V while the threshold voltage of the device, VTH was +0.5V by the charge modulation technology of CF4 plasma. When the distance of source-terminated field plate, Lpp was about 3um, the breakdown voltage of the device was apparently improved because the electric field near the gate edge was effectively shielded. The breakdown voltage and the specific on-resistance for the Z-gd and Lpp distance of the device about 15um and 3um were about 475V and about 2.9 m Q ? cm2 respectively. The results from RF measurement showed that with the variation of VGS, the fr and fmax parameters of the device with source-terminated field plate were the order of Gigahertz frequency. The DC, AC and transient characteristics of E-mode Power AlGaN/GaN HEMTs were satisfied and its forward current was about 90 mA. Therefore the E-mode AlGaN/GaN HEMTs was very suitable as the novel power switch technology in energy management application.
Wei Huang Shudan Zhang Juyan Xu
58th Research Institute, China Electronic Technology Group Corporation (CETC), Wuxi 214061, China
国际会议
上海
英文
1335-1337
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）