4H-SiC MESFET with a Novel MOS Gate Controlled Spacer Layer Structure

摘要：

A novel structure of 4H-SiC MESFETs is proposed which focuses on surface trap suppression. A MOS gate controlled spacer layer is shown to improve both DC and AC characteristics due to suppressed surface effect and decreased gate capacitance. A very high power density of 6.1 W/mm is obtained at S band operation. Compare with the well recognized buried gate structure, there is a significant improvement in the power density of about 18％. Also, a 12％ and a 15％ improvement in fT and fmax are obtained in AC simulation, respectively.

作者: Kun Song Chang-Chun Chai Hu-Jun Jia Yin-Tang Yang

作者单位: Department of Microelectronics, Xidian University, Xian 710071, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1338-1340

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）