Breakdown voltage enhancement in lateral AlGaN/GaN heterojunction FETs with multiple field plates

摘要：

It has been proposed in the literature to use metal field plates (FPs) in order to increase the breakdown voltage (BV) of AlGaN/GaN HEMTs. In this article we analyze the possibility of using multiple FPs to increase the gate-to-drain BV. We show that FPs with variable oxide thickness (with thinner oxide towards the gate electrode and thicker oxide thickness towards the drain electrode) increase the BV more efficiently than a single FP. FPs with variable oxide thickness can be built using multiple FPs with increasing oxide thickness from gate to drain and, when all FPs are connected to the source electrode.

作者: Petru Andrei

作者单位: Department of Electrical and Computer Engineering, Florida State University, Tallahassee, FL 32312, USA

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1344-1346

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）