A CMOS charge sensitive preamplifier for CdZnTe detector
In this work, a low noise and low power charge sensitive preamplifier (CSA) based on CSMC 0.6 μm double poly mix CMOS technology was designed and simulated. In this design, two MOSFETs were used as a feedback resistor and a feedback capacitor respectively to replace an on-chip resistor in parallel and an on-chip capacitor in a conventional CSA. Simulation results show that this design can reduce the noise level of the CSA and the area of the layout. The noise of the CSA can be less than several electrons, which can be calculated from the simulation results, and the power consumption is about 2.2mW/channel. Four channels can be placed in a 0.6×0.6 mm2 chip.
Zhubin Shi Lan Peng Linjun Wang Kaifeng Qin Jiahua Min Jijun Zhang Xiaoyan Liang Yiben Xia
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
国际会议
上海
英文
1347-1349
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）