Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs

摘要：

We theoretically investigate the mechanism of the electron rebound from the drain into the channel and its impact on the drain current in the nano-scale InGaAs MOSFETs by using the quantum corrected Monte Carlo (MC) simulation. The electrons almost ballistically transport in the channel at the gate length, Lg, of 10 nm. However the electron rebound becomes pronounced instead when the electrons degenerate at the bottleneck. Consequently the average electron velocity at the bottleneck, v,, decreases. This considerably diminishes the potential of the InGaAs MOSFETs for the current drivability.

作者: Hiroki I. Fujishiro Hisanao Watanabe Takahiro Homma Shinsuke Hara

作者单位: Department of Applied Electronic, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1350-1352

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）