AIGaN/GaN Dual Gate MOS HFET for Power Device Applications

摘要：

Dual gate AlGaN/GaN MOS HFET with Al2O3 as gate oxide layer was fabricated. In comparison with normal dual gate Schottky HFET, dual gate MOS HFET exhibits much lower gate leakage current, larger transconductance and output current. Besides, the dual gate MOS HFET shows excellent breakdown characteristic.

作者: Rumin Gong Jinyan Wang Shenghou Liu Zhihua Dong Cheng. P. Wen Min Yu Yong Cai Baoshun Zhang

作者单位: Insititute of Microelectronics, Peking University, Beijing, 100871, China Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, 215125, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1353-1355

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）