Multiple Ti/Al stacks induced thermal stability enhancement in Ti/Al/Ni/Au Ohmic contact on AlGaN/GaN heterostructure
Compared with Ti/Al/Ni/Au Ohmic contacts, Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au with multiple Ti/Al stacks improved the thermal stability. Multiplestacked Ohmic contacts showed lower degradation during long-time thermal aging at 600 ℃. The samples after degradation were tested with Transmission Electron Microscopy (TEM) to research the structural reasons. TEM results show that multiple stacks can avoid the producing of voids, which usually appear in the single Ti/Al stacked Ohmic metals. Al-Au alloy is believed to be the origin of the voids. While multiple Ti/Al stacks can reduce the size and quantity of Al-Au alloy and thus avoid the appearance of voids. The thermal stability enhancement of Ti/Al/..../Ti/Al/Ni/Au Ohmic contacts rendered it a great application in high temperature AlGaN/GaN HEMTs.
Ti/Al multiple stacks AlGaN/GaN Ohmic contact thermal stability
Zhihua Dong Yangyuan Wang Jinyan Wang Rumin Gong Shenghou Liu C. P. Wen Min Yu Fujun Xu Yilong Hao Bo Shen
Institute of Microelectronics, Peking University, Beijing, China, 100871 Institute of Microelectronics, Peking University, Beijing, China, 100871 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking
国际会议
上海
英文
1359-1361
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）