InGaN/GaN Multi-Quantum-Well Nanowires and Light Emitting

摘要：

InGaN/GaN multi-quantum-well (MQW) nanowires and accordingly light-emitting-diodes (LEDs) were fabricated on the n-GaN/sapphire substrate with a nano-patterned SiO_2 film as growth mask. The structural characteristics, optical and electrical properties were investigated, the observed results show that a InGaN/GaN MQW nanowire has smooth surface morphologies and triangular cross sectional structure. A strong cathodoluminescence emission peak related to InGaN/GaN MQW is observed located at 461 nm. In addition, InGaN/GaN MQW nanowire LED shows typical p-n junction characteristics with a low turnon voltage, and its electroluminescence displays purplish.

作者: Yao Yin Ruihua Cao Peng Chen Qing Wan Lin Pu Yi Shi Rong Zhang Youdou Zheng

作者单位: School of Electronics Science and Engineering and Key Laboratory of Photonic and Electronic Material Department of Physics, Hunan University, Changsha, 410082, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1362-1364

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）