Improved subthreshold swing and gate bias stressing stability of α-IGZO thin-film transistors with HfON/HfO2/HfON tri-stack dielectrics

摘要：

The electrical characteristics of a-IGZO thin-film transistors (TFTs) with HfO2 and HfON/Hf02/HfON (NON) tri-stack gate dielectrics are comparative investigated. Experimental results indicate that NON gate dielectric can effectively improve interface properties and enhance device reliability compared to HfO2 gate insulator. Bottom gate a-IGZO TFTs with NON gate dielectrics exhibit improved performance with a saturation mobility of 10.2 cm2/V-s, an on-off current ratio of 2.2 x 106, a subthreshold slope of 0.13 V/decade, and a threshold voltage shift of 0.7 V after gate bias stress at 10 V for 300 s, which are ascribed to the inserting of HfON interlayers between substrate and HfO2, and between HfO2 and channel film.

作者: Xingsheng Tong Longyan Yuan Xiao Zou

作者单位: Department of Electromachine Engineering, Jianghan University. Wuhan, 430056. P. R. China Department of Electronic Science & Technology, School of Physics & Technology, Wuhan University, Wuh Department of Electromachine Engineering, Jianghan University. Wuhan, 430056. P. R. China Department

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1365-1367

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）