Design Consideration of Device Dimension and Sturcture of Power HBT Transisor

摘要：

In this paper several sub-cell and unit-cell power heterojunction bipolar transistor were fabricated and the impact of device dimension and structure on the device characteristic of sub-cell and unit-cell power HBT Transisotor is analyzed and discussed. It was found that: for the sub-cell HBT with different dimension a larger emitter size means smaller RF gain. When the sub-cells were used to form unitcells, the unit-cell, which was formed by the larger sub-cell HBT, has the smaller loss of RF gain, the smaller layout area and the higher intrinsic stability.

作者: Yanhu Chen Huajun Shen Xinyu Liu Huijun Li Shanggong Feng

作者单位: The school of Information Science and Engineering, Shan Dong University, Jinan 250100 China Institute of Microelectronics of Chinese Academy of Science, Beijing 100029 China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1368-1370

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）