C-V Characteristics of AlGaN/GaN Heterojunction Structures Investigated by Self-Consistent Schrodinger and Poisson Equations

摘要：

Effects of the AlGaN doping concentration, GaN doping concentration, Al mole fraction, AlGaN barrier layer thickness and temperature on the C-V characteristics on AlGaN/GaN heterojunction structures are investigated by solving the Schrodinger and Poisson equations self-consistently. The obtained theoretical C-V curve provides a baseline for the electrical parameter extraction of AlGaN/GaN heterojunction structures.

作者: Chunfu Zhang Qian Feng Chunxiang Zhu Yue Hao

作者单位: Wide Bandgap Semiconductor Technology Disciplines State key Laboratory, Xidian University, China, 71 Wide Bandgap Semiconductor Technology Disciplines State key Laboratory, Xidian University, China, 71 Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 1192

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1371-1373

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）