0.3-μm Gate-length Metamorphic AIInAs/GalnAs HEMTs on Silicon Substrates by MOCVD

摘要：

Fabrication and performance of high-frequency 0.3-nm gate-length depletion-mode metamorphic Alo.50Ino.soAs/Gao.47Ino.53As high electron mobility transistors (mHEMT) grown by Metalorganic Chemical Vapor Deposition (MOCVD) on n-type silicon substrates is reported. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. A maximum trans-conductance up to 739mS/mm was measured. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 72.4 and 77.3GHz, respectively. An input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 6.8 and a voltage gain, gm/go, of 6.9 are observed in the device.

作者: Hai-Ou Li Ming Li Chak Wah Tang Zhen Yu Zhong Kei May Lau

作者单位: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1374-1376

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）