High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD

摘要：

High-performance implant-free Ino.53Gao.47As-channel MOSFETs grown on GaAs substrates by Metalorganic Chemical Vapor Deposition (MOCVD) are demonstrated. Atomic-layer-deposited (ALD) Al2O3 was used as gate dielectric on top of a δ-doped Ino.53Gao.47As/Inoj1Alo.49As metamorphic heterojunction structures grown on GaAs substrates. A 1-μm gate-length MOSFET with 15nm A12O3 shows a maximum drain current of 590 mA/mm and peak Gm of 501 mS/mm. To the best of our knowledge, these are the highest reported values to date for III-V MOSFETs on GaAs substrates. The maximum gate leakage is 7.2nA/mm at the forward gate bias of 4V and the on resistance is 1491 Ωμm.

作者: Xiuju Zhou Chak Wah Tang Haiou Li Peng Chen Kei May Lau

作者单位: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1377-1379

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）