CMOS Current Source Based Radiation Sensors

摘要：

This paper presents a comparison of two gamma radiation sensors intended to be embedded in CMOS integrated circuits. Both sensors are based on a current source, whose output depends upon the cumulated radiation dose, followed by a currentfrequency converter. The two sensors differ in the sensing elements: one uses conventional transistors and the other a floating gate transistor. Results are discussed in terms of sensitivity to radiation dose, and supply voltage and temperature dependence.

作者: E. Garcia-Moreno R. Picos E. Isern M. Roca J. Font K. Suenaga

作者单位: University of Balearic Islands, ES 07122, Spain University of Balearic Islands, ES 07122,Spain

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1380-1383

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）