A Fast Integrated a-Si Gate Driver

摘要：

A fast integrated gate driver with amorphous silicon thin film transistor (a-Si:H TFT) is proposed in this paper. To improve the circuit speed, a new input scheme is designed to provide a full scale pre-charge voltage. So the loss of pre-charge voltage, a challenge in the conventional designs, is avoided. Simulations show that the proposed gate driver has a much improved driving speed in comparison with the conventional ones. The improvement is more effective in the case of the higher Vth and lower supply voltage. The proposed gate driver is suitable for high performance display applications.

作者: Congwei Liao Longyan Wang Changde He Yinan Liang Shengdong Zhang David Dai Smart Chung T. S. Jen

作者单位: Shenzhen Graduate School, Peking University, Shenzhen 518055, PRC Institute of Jiangsu (IVO) FPD Technology & Research, Info Vision Optoelectronics (Kunshan) Co., Ltd

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1438-1440

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）