A Study on Metal-Insulator-Silicon Hydrogen Sensor with La2O3 as Gate Insulator

摘要：

A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogensensing properties were studied from room temperature (RT) to 300℃. Results showed that the device had excellent hydrogen-sensing performance below about 250℃.

作者: Gang Chen P.T. Lai Jerry Yu

作者单位: Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong School of Electrical and Computer Engineering, RMIT University, Melbourne, Australia

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1465-1467

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）