会议专题

A Study on Metal-Insulator-Silicon Hydrogen Sensor with La2O3 as Gate Insulator

A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogensensing properties were studied from room temperature (RT) to 300℃. Results showed that the device had excellent hydrogen-sensing performance below about 250℃.

Gang Chen P.T. Lai Jerry Yu

Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong School of Electrical and Computer Engineering, RMIT University, Melbourne, Australia

国际会议

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

上海

英文

1465-1467

2010-11-01(万方平台首次上网日期,不代表论文的发表时间)