A Study on Metal-Insulator-Silicon Hydrogen Sensor with La2O3 as Gate Insulator

A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogensensing properties were studied from room temperature (RT) to 300℃. Results showed that the device had excellent hydrogen-sensing performance below about 250℃.
Gang Chen P.T. Lai Jerry Yu
Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong School of Electrical and Computer Engineering, RMIT University, Melbourne, Australia
国际会议
上海
英文
1465-1467
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)